ON Semiconductor MJE15030G Discrete NPN Transistor TO 220 Tube

ON Semiconductor MJE15030G is a discrete NPN bipolar junction transistor (BJT) encased in a TO-220 package, designed for high-power applications. This silicon transistor offers a robust solution with a collector-emitter voltage rating of 150V and a continuous collector current of up to 8A, making it well-suited for power amplifiers, switching regulators, and motor control circuits. Renowned for its reliability and high-speed switching capability, the MJE15030G is often utilised in audio amplification and power management systems where efficient thermal performance is paramount. Its design caters to demanding environments where precise electronic control and durability are critical, making it an essential component in both industrial and consumer electronic systems.

Type	Transistor (BJT) - Discrete
Collector Current	8A
Collector emitter Voltage U(CEO)	150V
Content	1
DC Current gain hFE - reference Current	20µA
Enclosure	TO 220
Mounting Type	Through-hole
Power (max) P(TOT)	50W
Transit frequency f(T)	0.030GHz