Infineon Technologies IRF3710STRLPBF MOSFET N-channel 200W D2PAK

Infineon Technologies' IRF3710STRLPBF is a robust N-channel MOSFET designed for high-efficiency power applications. This metal oxide semiconductor field effect transistor is encapsulated in a D2PAK package, offering a power dissipation capacity of up to 200 watts. The MOSFET is engineered with a unipolar transistor architecture, featuring characteristics that allow it to handle high currents and voltages with minimal loss, making it ideal for use in switching power supplies, DC-DC converters, and motor control systems. Its attributes include a low on-state resistance and high input impedance, which enhance switching performance and thermal efficiency in various industrial and consumer electronics. The device's design enables reliable operation under demanding conditions, further supporting its suitability for applications that require efficient power management.

Type	IRF3710SPBF-GURT
Channels	1
Content	1
Enclosure	D2PAK
I(d)	57A
Mounting Type	Surface-mount
Power (max) P(TOT)	200W
Product Type	MOSFET
R(DS)(on)	0.023Ω