Infineon Technologies BCW66KHE6327HTSA1 Transistor BJT NPN SOT 23 Tape

Infineon Technologies introduces the BCW66KHE6327HTSA1, a discrete bipolar junction transistor (BJT) designed in an NPN configuration. Encapsulated in a compact SOT-23 package, this transistor is suitable for applications requiring high density and efficient space utilisation on printed circuit boards. Its NPN configuration allows for effective switching and amplification tasks, with typical usage in signal processing, general-purpose amplification, and as a switch in various electronic circuits. Given its robust construction and reliable performance, this silicon-based transistor finds its place in consumer electronics, industrial automation systems, and communication devices. Due to its versatility, the BCW66KHE6327HTSA1 excels in environments where low noise and linear gain characteristics are crucial.

Type	Transistor (BJT) - Discrete
Collector Current	0.1A
Collector emitter Voltage U(CEO)	32V
Content	1
DC Current gain hFE - reference Current	380µA
Enclosure	SOT 23
Mounting Type	Surface-mount
Power (max) P(TOT)	0.33W
Transit frequency f(T)	0.25GHz