Diotec BC558C Transistor BJT BC558C TO 92 PNP Discrete semiconductors

Diotec BC558C is a silicon bipolar junction transistor (BJT) designed in a TO-92 package configuration. As a PNP type transistor, it is characterised by its ability to handle a collector current up to 100 mA and a collector-emitter voltage of 30 V, making it suitable for applications requiring small-signal amplification. With a high DC current gain (hFE) between 420 and 800, the BC558C is often employed in amplifier circuits, signal processing, and low-power switching applications. Its reliability and consistent performance make it a suitable choice for engineers designing discrete circuits in consumer electronics and industrial devices.

Type	Transistor (BJT) - Discrete
Collector Current	100mA
Collector emitter Voltage U(CEO)	30V
Collector-emitter saturation Voltage (max.)	250mV
Content	1
DC Current Gain (hfe)	400
Enclosure	TO 92
Mounting Type	Through-hole mounting
Operating temperature (max.)	150°C
Power (max) P(TOT)	0.5W
Product Type	Transistor (BJT) - Discrete
Transit frequency f(T)	100MHz