Low power, small signal transistor with silicon planar epitaxial construction, designed for general purpose switching and amplifier applications.
- NPN polarity
- Collector emitter breakdown voltage 40V
- Collector base breakdown voltage 60V
- Collector current 600mA
- Power 625mW
- Transition frequency 250MHz
- TO-92 case
Type |
2N4401 |
Case |
TO-92 |
Collector-Emitter Voltage |
40V |
Collector Current Cont. |
0.6A |
Power Dissipation |
0.625W |
DC Current Gain (max.) |
300 |
Transition Frequency |
250MHz |
Operating Temperature |
150°C |
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- ROHS : Compliant
- ROHS : Exempt
- ROHS : Non Compliant
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