ON Semiconductor BSP52T1G Transistor NPN Bipolar Output 60V 1A 1W SOT-223

ON Semiconductor BSP52T1G is an NPN bipolar transistor designed for applications requiring robust performance with a maximum collector-emitter voltage of 60 V and a collector current capability of up to 1 A. This transistor is encapsulated in a SOT-223 package, offering an excellent power dissipation capacity of 1 W, making it ideal for compact electronics where efficient heat management is essential. As a versatile semiconductor component, it finds typical usage in amplifier and switching applications, suitable for driving loads and providing amplification in low to medium power scenarios. The BSP52T1G's reliable silicon construction makes it a dependable choice for engineers in need of consistent performance across various electronic design contexts.

Type	Transistor (BJT) - Discrete
Collector Current	1A
Collector emitter Voltage U(CEO)	80V
Content	1
DC Current gain hFE - reference Current	1µA
Enclosure	SOT 223
Mounting Type	Surface-mount
Power (max) P(TOT)	0.8W