ON Semiconductor BCP56-16T1G Transistor NPN 80V 1A TO-220 Epitaxial Silicon

ON Semiconductor BCP56-16T1G is an NPN bipolar junction transistor designed for reliable electronic switching and amplification tasks, ideal for a wide range of engineering applications. With a maximum collector-emitter voltage of 80V and a continuous collector current of 1A, this epitaxial silicon-based transistor is well-suited for high-voltage, moderate-current applications. Its TO-220 package ensures effective heat dissipation, essential for maintaining performance stability in power management circuits. Engineers frequently utilise this component in audio amplifiers, voltage regulation systems, and various types of signal processing equipment, where robust electronic performance is essential.

Type	Transistor (BJT) - Discrete
Collector Current	1A
Collector emitter Voltage U(CEO)	80V
Content	1
DC Current gain hFE - reference Current	100µA
Enclosure	SOT 223
Mounting Type	Surface-mount
Power (max) P(TOT)	1.5W
Transit frequency f(T)	0.13GHz