ON Semiconductor BC850CLT1G Transistor NPN epitaxial silicon surface mount

ON Semiconductor BC850CLT1G is an NPN bipolar junction transistor designed for surface mount applications. It features epitaxial silicon construction, offering reliable performance with a maximum continuous collector current of 100 mA and a maximum collector-emitter voltage of 45 V. This makes it suitable for low power signal amplification and switching tasks in various electronic circuits, including audio, radio frequency, and digital applications. Due to its surface mount package, the BC850CLT1G is ideal for compact electronic assemblies and can be used in consumer electronics, telecommunications, and automotive electronics systems. Its robust design and standard electronics characteristics ensure consistent operation in professional engineering environments.

Type	Transistor (BJT) - Discrete
Collector Current	0.1A
Collector emitter Voltage U(CEO)	45V
Content	1
DC Current gain hFE - reference Current	420µA
Enclosure	SOT 23
Mounting Type	Surface-mount
Power (max) P(TOT)	0.225W
Transit frequency f(T)	0.1GHz