ON Semiconductor BC848CLT1G Transistor NPN Maximum Voltage 30V Current 100mA

ON Semiconductor BC848CLT1G is a small signal NPN bipolar junction transistor renowned for its robust performance in various electronic applications. This silicon transistor offers a maximum collector-emitter voltage of 30 volts and can handle a collector current up to 100 milliamperes, making it suitable for low-power amplification and switching tasks in circuit designs. It is well-suited for use in signal processing, small signal amplification, and as a component in various types of switching circuits within consumer electronics, communication devices, and industrial control systems. The device adheres to standard electronic specifications, ensuring compatibility and reliable operation in diverse engineering projects. This transistor remains a dependable choice for designers requiring precise control within their electronic circuits.

Type	Transistor (BJT) - Discrete
Collector Current	0.1A
Collector emitter Voltage U(CEO)	30V
Content	1
DC Current gain hFE - reference Current	420µA
Enclosure	SOT 23
Mounting Type	Surface-mount
Power (max) P(TOT)	0.225W
Transit frequency f(T)	0.1GHz