ON Semiconductor BC847CLT1G Transistors NPN SMD Bipolar Junction 45V 100mA

ON Semiconductor BC847CLT1G is an NPN silicon bipolar junction transistor designed for use in a variety of electronic applications that require efficient switching and amplification. Capable of handling a maximum collector-emitter voltage of 45V and a continuous current of up to 100mA, this surface-mount device is ideally suited for low-power applications where space is a constraint. Its performance characteristics make it a versatile choice for signal processing, driving small relay coils, and general-purpose digital circuitry in compact devices. Common engineering applications include use in signal switching, amplification circuits, and as a fundamental component in simple logic gates. The BC847CLT1G's robust design and reliability ensure it is well-suited for both consumer and industrial electronic systems.

Type	Transistor (BJT) - Discrete
Collector Current	0.1A
Collector emitter Voltage U(CEO)	45V
Content	1
DC Current gain hFE - reference Current	420µA
Enclosure	SOT 23
Mounting Type	Surface-mount
Power (max) P(TOT)	0.225W
Transit frequency f(T)	0.1GHz