ON Semiconductor BC817-40LT1G Bipolar transistor NPN 45V 0.5A SMT

ON Semiconductor BC817-40LT1G is a bipolar transistor designed for robust performance in compact electronic circuits. As an NPN silicon transistor, it operates comfortably at a maximum collector-emitter voltage of 45V and a collector current of up to 0.5A, making it suitable for switching and amplification purposes in low to medium power applications. With its surface-mount technology (SMT), it offers efficiency and space-saving advantages in modern electronics design. Commonly used in applications such as voltage regulation, signal processing, and interfacing in embedded systems, it is a reliable choice for engineers looking to implement precise electronic control. The BC817-40LT1G is integral in developing efficient, compact, and versatile electronic devices, supporting various technological advancements.

Type	Transistor (BJT) - Discrete
Collector Current	0.5A
Collector emitter Voltage U(CEO)	45V
Content	1
DC Current gain hFE - reference Current	250µA
Enclosure	SOT 23
Mounting Type	Surface-mount
Power (max) P(TOT)	0.225W
Transit frequency f(T)	0.1GHz