Infineon Technologies IRF7853TRPBF MOSFET N-channel 2.5W SO-8

Infineon Technologies IRF7853TRPBF is a high-performance N-channel MOSFET designed for demanding applications requiring efficient power management and switching capabilities. This device features a maximum power dissipation of 2.5 watts and is housed in a compact SO-8 package, making it suitable for space-constrained environments. The IRF7853TRPBF MOSFET is characterised by its metal-oxide-semiconductor structure, facilitating low on-resistance and high-speed switching, while the unipolar nature of the transistor enables more precise control over power delivery. Engineers commonly deploy this MOSFET in applications such as DC-DC converters, motor control systems, and power management circuits, where efficiency and reliability are paramount. Its design supports a range of uses in both consumer electronics and industrial equipment, leveraging its robust field-effect transistor properties to enhance overall system performance.

Type	IRF7853PBF-GURT
Channels	1
Content	1
Enclosure	SO 8
I(d)	8.3A
Mounting Type	Surface-mount
Power (max) P(TOT)	2.5W
Product Type	MOSFET
R(DS)(on)	0.018Ω