Infineon IRF7316TRPBF MOSFET 2 P-channel 2.0 W SO 8 MOSFETS

Infineon Technologies IRF7316TRPBF is a two P-channel MOSFET housed in an SO-8 package, characterised by its unipolar metal-oxide-semiconductor structure that enhances efficient switching performance. This metal oxide semiconductor field effect transistor operates with a maximum power dissipation of 2.0 W, making it suitable for applications requiring superior thermal management. The IRF7316TRPBF features a low on-state resistance and is designed for use in high-speed switching and load switching applications, such as power supply circuits and motor control systems. It effectively utilises a depletion mode operation, providing high input impedance and fast switching, which is essential for applications demanding precise control and efficiency. This component is particularly advantageous in designs where space is limited but reliable performance is paramount.

Type	IRF7316PBF-GURT
Channels	2
Content	1
Enclosure	SO 8
Mounting Type	Surface-mount
Power (max) P(TOT)	2.0W
Product Type	MOSFET
R(DS)(on)	0.098Ω