Diotec MMBT5551 BJT Discrete NPN Transistor SOT 23 Package

Diotec MMBT5551 is a discrete bipolar junction transistor (BJT) featured in a compact SOT-23 package. This NPN silicon transistor is designed for high-voltage, low-current applications, making it suitable for tasks requiring a reliable switching mechanism or amplification capabilities. It offers a collector-emitter voltage of up to 160 volts and a collector current of 600 milliamps, catering to a variety of applications in telecommunications, signal processing, and general-purpose amplification circuits. Its compact form factor and efficient performance make it an ideal choice for engineers looking to implement it in dense circuit board layouts where space savings and dependability are critical.

Type	Transistor (BJT) - Discrete
Collector Current	600mA
Collector emitter Voltage U(CEO)	160V
Collector-emitter saturation Voltage (max.)	200mV
Content	1
DC Current Gain (hfe)	250
Enclosure	SOT 23
Mounting Type	Surface-mount
Operating temperature (max.)	150°C
Power (max) P(TOT)	0.25W
Product Type	Transistor (BJT) - Discrete
Transit frequency f(T)	100MHz