Diotec MMBT2907A Transistor BJT Discrete SOT 23 PNP Transistors

Diotec MMBT2907A is a discrete PNP bipolar junction transistor (BJT) housed in a compact SOT-23 package. This device is designed for general-purpose switching and amplification applications, offering a collector-emitter breakdown voltage of 60V and a continuous collector current of 600mA. Its silicon-based construction ensures robust performance and reliable thermal characteristics. Commonly utilised in signal processing, switching circuits, and low-power amplifiers, the MMBT2907A is a versatile component in various electronic applications where efficient switching and amplification are essential.

Type	Transistor (BJT) - Discrete
Collector Current	600mA
Collector emitter Voltage U(CEO)	60V
Collector-emitter saturation Voltage (max.)	1600mV
Content	1
DC Current Gain (hfe)	100
Enclosure	SOT 23
Mounting Type	Surface-mount
Operating temperature (max.)	150°C
Power (max) P(TOT)	0.25W
Product Type	Transistor (BJT) - Discrete
Transit frequency f(T)	100MHz