Diotec BCP55-6 Transistor BJT Discrete SOT223 NPN

Diotec BCP55-6 is a silicon bipolar junction transistor (BJT) designed for discrete applications and housed in a compact SOT223 package. This NPN-type transistor is distinguished by its efficient current handling and moderately high voltage capacity, making it suitable for low to medium-power amplification and switching tasks in various electronic circuits. The transistor's robust construction allows it to function effectively in diverse engineering applications, including serving as a component in transistor driver chips or in the amplification stages of audio and signal processing equipment. Its reliability and performance are well-suited for applications where consistent transistor characteristics are essential, such as in industrial control systems and consumer electronics.

Type	Transistor (BJT) - Discrete
Collector Current	1000mA
Collector emitter Voltage U(CEO)	60V
Collector-emitter saturation Voltage (max.)	500mV
Content	1
DC Current Gain (hfe)	40
Enclosure	SOT 223
Mounting Type	Surface-mount
Operating temperature (max.)	150°C
Power (max) P(TOT)	2W
Product Type	Transistor (BJT) - Discrete
Transit frequency f(T)	100MHz