Diotec 2N2907A BJT Transistor PNP TO-92 Discrete 2N2907A

Diotec 2N2907A is a bipolar junction transistor (BJT) explicitly designed as a discrete component in a TO-92 package, featuring a PNP configuration. This silicon-based transistor is engineered to offer reliable switching and amplification capabilities, making it an optimal choice for low to medium current applications. Key technical specifications include a collector-emitter voltage rating of up to 60 V and a collector current capacity of up to 600 mA, ensuring robust performance for a variety of tasks. Common applications for the 2N2907A transistor include signal amplification, switching circuits, and use within analogue signal processing as well as being utilised in timing circuits and as a driver in various electronic applications.

Type	Transistor (BJT) - Discrete
Collector Current	600mA
Collector emitter Voltage U(CEO)	60V
Collector-emitter saturation Voltage (max.)	300mV
Content	1
DC Current Gain (hfe)	200
Enclosure	TO 92
Mounting Type	Through-hole mounting
Operating temperature (max.)	150°C
Power (max) P(TOT)	0.625W
Product Type	Transistor (BJT) - Discrete
Transit frequency f(T)	100MHz