High voltage zener protected N-channel power MOSFET using ST Microelectronics SuperMESH technology.
- Low ON-resistance allows use of smaller heatsinks
- Integrated back-to-back zener diode between gate and source terminals for ESD and voltage spike protection
- Low threshold voltage
- Fully avalanche tested during manufacture
- Applications include off-line and switch-mode power supplies, adaptors, power factor correction, lamp ballasts and high intensity discharge lamps
- 600V drain-source breakdown voltage
- 3.3R drain-source on-resistance
- 2.4A drain current
- 20W power
- Supplied in TO-220FP package
Channel Type |
N-Channel |
Drain Current |
2.4A |
Drain-Source Breakdown Voltage |
600V |
Drain-Source On-Resistance |
3.3Ω |
Gate Source Voltage |
30V |
Package/Case |
TO-220FP |
Power Dissipation |
20W |
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