ON Semiconductor BAS21LT1G ESD diode 250 V 200 mA SOT 23 Tape on Full reel

ON Semiconductor BAS21LT1G is a high-quality semiconductor diode designed for efficient voltage blocking and low-leakage current applications. This PN junction diode is optimised for electrostatic discharge (ESD) protection, providing robust defence against voltage spikes up to 250 V while maintaining a current handling capacity of 200 mA. Encased in a SOT-23 package, this diode is suitable for compact electronic circuit boards where space is limited, making it ideal for automotive, telecommunications, and consumer electronics where reliable ESD safeguarding is crucial. Delivered on tape for ease of integration in automated placement environments, the BAS21LT1G ensures seamless deployment in high-volume manufacturing processes.

Type	ESD diode
Enclosure	SOT 23
Forward current I(F)	200mA
Forward voltage U(F)	1.25V
Mounting Type	Surface-mount
Operating temperature (max.)	+150°C
Operating temperature (min.)	-55°C
Product Type	ESD diode
Reverse leakage Current I(r)	100000nA
Reverse Voltage U(R)	250V