Infineon Technologies IRLR2908TRPBF-GURT MOSFET N-channel 120W TO-252AA

Infineon Technologies IRLR2908TRPBF-GURT is an N-channel MOSFET designed for high power applications, contained within a TO-252AA package. It is characterised by its maximum power dissipation of 120 watts and is optimised for efficient switching and amplification in electronic circuits. As a metal-oxide-semiconductor field-effect transistor, it features a unipolar construction which contributes to its capability for low on-state resistance and rapid switching speeds. This makes it particularly suitable for use in power management tasks, motor control systems, and high-performance electronic designs requiring precise control over electrical currents. Engineers can utilise the IRLR2908TRPBF-GURT to efficiently manage energy in applications where stringent power efficiency is paramount.

Type	IRLR2908PBF-GURT
Channels	1
Content	1
Enclosure	TO 252AA
I(d)	30A
Mounting Type	Through-hole
Power (max) P(TOT)	120W
Product Type	MOSFET
R(DS)(on)	0.03Ω