Infineon Technologies IRLR2905TRPBF MOSFET N-channel 110W TO-252AA MOSFET

Infineon Technologies IRLR2905TRPBF is an N-channel metal oxide semiconductor field effect transistor (MOSFET) designed to meet stringent performance requirements in power management applications. This MOSFET is encapsulated in a robust TO-252AA package and offers a maximum power dissipation of 110 watts, making it suitable for high-efficiency switching applications. With its inherent unipolar operation, the IRLR2905TRPBF exhibits low on-state resistance, which enhances power conversion efficiency by minimising conduction losses. Engineers can utilise this device in various sectors including industrial, automotive, and consumer electronics, where reliable and efficient control of electrical energy is paramount. The component's design leverages the properties of junction field effect transistors (JFETs) and insulated gate field effect transistors (IGFETs) to provide a versatile solution for switching and amplification tasks in both depletion and enhancement modes.

Type	IRLR2905TRPBF
Channels	1
Content	1
Enclosure	TO 252AA
I(d)	42A
Mounting Type	Through-hole
Power (max) P(TOT)	110W
Product Type	MOSFET
R(DS)(on)	0.04O