Infineon Technologies IRF3710ZPBF MOSFET N-channel 160W TO-220AB

MPN
IRF3710ZPBF
EAN-13
2050009791681
Order Code
16-5849
Country of Origin
USA
Qty Unit Price (Ex VAT)
5+ £1.50
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Order in multiples of 1
Available to back orderBack order, lead time 14 days

Infineon Technologies IRF3710ZPBF is an N-channel MOSFET designed to deliver a maximum continuous drain current of 57A and a total power dissipation of 160W in the TO-220AB package. This metal-oxide-semiconductor field-effect transistor operates efficiently at a drain-source voltage of up to 100V, making it well-suited for high-power switching applications, such as motor control, power supplies, and load switches. Its low on-state resistance and fast switching speed, characteristic of an insulated-gate field-effect transistor (IGFET), provide excellent efficiency, while the unipolar nature of this component simplifies drive circuitry requirements. Designed for use in environments that require robust and dependable components, the IRF3710ZPBF accommodates demanding conditions within industrial and automotive systems.
Type IRF3710ZPBF
Channels 1
Content 1
Enclosure TO 220AB
I(d) 59A
Mounting Type Through-hole
Power (max) P(TOT) 160W
Product Type MOSFET
R(DS)(on) 0.018Ω

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