Infineon Technologies IRF3710PBF MOSFET N-channel 1 200W TO 220AB

Infineon Technologies IRF3710PBF is an N-channel, metal oxide semiconductor field effect transistor (MOSFET) designed for power applications. This unipolar transistor is housed in a TO-220AB package and is capable of managing up to 200 watts, making it suitable for high-power settings. The IRF3710PBF features a low on-state resistance, enhancing its efficiency and thermal performance in circuit designs that require current control. With a maximum drain-source voltage of 100 volts and a continuous drain current of 57 amps, this MOSFET is often employed in applications such as power management systems, motor drives, and DC-DC converters. Its reliable gate operation ensures precise control over the switching and conduction states, providing an effective solution for various electronic engineering requirements.

Type	IRF3710PBF
Channels	1
Content	1
Enclosure	TO 220AB
I(d)	57A
Mounting Type	Through-hole
Power (max) P(TOT)	200W
Product Type	MOSFET
R(DS)(on)	0.023Ω