Infineon Technologies IRF3205STRLPBF N-channel MOSFET 200W D2PAK

Infineon Technologies IRF3205STRLPBF is an N-channel MOSFET designed for high-efficiency switching applications, featuring a maximum power dissipation of 200 watts and housed in the robust D2PAK package. As a Field Effect Transistor, it utilises a metal oxide semiconductor structure to provide efficient control over a wide range of voltages, making it suitable for both switching and amplification purposes. Key characteristics include a low on-state resistance and high-current carrying capability, ensuring reliable performance in demanding environments. This MOSFET is widely used in power management circuits, motor drivers, and other applications where efficient energy handling and control are paramount.

Type	IRF3205SPBF-GURT
Channels	1
Content	1
Enclosure	D2PAK
I(d)	110A
Mounting Type	Surface-mount
Power (max) P(TOT)	200W
Product Type	MOSFET
R(DS)(on)	0.008Ω