Infineon Technologies IKW15N120H3FKSA1 IGBT 1200V TO-247 high power efficiency

Infineon Technologies IKW15N120H3FKSA1 is a silicon-based isolated gate bipolar transistor (IGBT) designed for high power efficiency applications. This component is housed in a TO-247 package, offering a robust 1200V rating suitable for demanding environments. As a versatile and reliable option, it combines the switching speed of a MOSFET with the high current and low saturation voltage capacity of a bipolar transistor, making it ideal for applications such as motor drives, renewable energy systems, and industrial inverters. Its design optimises energy efficiency while providing the thermal stability and high reliability required in high-voltage applications.

Type	IKW15N120H3FKSA1
Continuous Collector Current	30A
Collector Emitter Voltage	1200V
Power Dissipation	217W
Package Type	TO 247
Mounting Type	Through-hole
Off delay t(d)(off)(2)	260ns
On delay (t(d)(on)	21ns
Product Type	IGBT