Infineon Technologies IGW40N60H3FKSA1 IGBT TO-247 600V high-efficiency tube

Infineon Technologies IGW40N60H3FKSA1 is a high-performance insulated gate bipolar transistor (IGBT) housed in a TO-247 package, designed for efficient switching applications. This 600V device combines the characteristics of bipolar transistors with the ease of control of MOSFETs, providing a high efficiency solution ideal for applications such as motor drives, induction heating, and power converters. The IGW40N60H3FKSA1 is engineered for robust performance, featuring low on-state voltage drop and high short-circuit ruggedness. Often selected in industrial environments, it supports efficient energy conversion and management in demanding applications. Its robust design can contribute significantly to the optimisation of energy use in both consumer and industrial electronics.

Type	IGW40N60H3FKSA1
Collector Current	80A
Collector emitter reverse Voltage U(CES)	600V
Enclosure	TO 247
Mounting Type	Through-hole
Off delay t(d)(off)(2)	197ns
On delay (t(d)(on)	19ns
Product Type	IGBT