Infineon IRLR120NTRPBF MOSFET 48W N-channel TO-252AA

Infineon Technologies' IRLR120NTRPBF is a robust N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed with a power dissipation capacity of 48W housed in a TO-252AA package. This unipolar transistor is optimised for high-efficiency switching applications, thanks to its low on-state resistance and rapid switching speeds, which are critical in high-performance demanding environments. Typical applications for the IRLR120NTRPBF include power management systems, motor drives, and switching regulators, where efficient power handling and reliable operation are paramount. The device's design utilises an insulated gate field-effect transistor (IGFET) structure, ensuring that it is particularly suited for voltage-controlled applications, expanding its versatility across various electronic systems.

Type	IRLR120NPBF-GURT
Channels	1
Content	1
Enclosure	TO 252AA
I(d)	10A
Mounting Type	Through-hole
Power (max) P(TOT)	48W
Product Type	MOSFET
R(DS)(on)	0.265Ω