Infineon IRF7319TRPBF IRF7319PBF-GURT MOSFET 2 N 1 P channel 2.0W SO-8

Infineon Technologies IRF7319TRPBF is a MOSFET featuring two N-channel and one P-channel transistors encapsulated in an SO-8 package. This metal-oxide-semiconductor field-effect transistor (MOSFET) is designed for efficient switching and amplification, leveraging its unipolar transistor capabilities to achieve low on-state resistance and high-speed performance. With a power dissipation of 2.0 watts, the IRF7319TRPBF is suitable for applications requiring compact design and reliable operation, such as power management systems, DC-DC converters, and motor control circuits. The transistor's configuration allows for effective current flow regulation through its gate, making it ideal for use in various electronic devices requiring both power handling and signal processing.

Type	IRF7319PBF-GURT
Channels	2
Content	1
Enclosure	SO 8
I(d)	6.5A
Mounting Type	Surface-mount
Power (max) P(TOT)	2.0W
Product Type	MOSFET
R(DS)(on)	0.098Ω