Infineon IRF640NSTRLPBF MOSFET 1 N-channel 150 W D2PAK

Infineon Technologies IRF640NSTRLPBF is a robust N-channel MOSFET offering high efficiency for power management and control applications. This device is characterised by a maximum drain-source voltage of 200V and a drain current rating of up to 18A, delivering a total power dissipation capacity of 150W in its D2PAK surface-mount packaging. As a metal-oxide-semiconductor field-effect transistor (MOSFET), the IRF640NSTRLPBF exhibits excellent switching performance and low on-state resistance, which optimises power loss and thermal management. These features make it suitable for applications such as switch mode power supplies, motor control systems, and DC-DC converters, where reliable and efficient power handling is essential.

Type	IRF640NSPBF-GURT
Channels	1
Content	1
Enclosure	D2PAK
I(d)	18A
Mounting Type	Surface-mount
Power (max) P(TOT)	150W
Product Type	MOSFET
R(DS)(on)	0.15O