Infineon BSS139H6327XTSA1 BSS139 MOSFET N-channel 0.36W SOT-23

Infineon Technologies BSS139H6327XTSA1 is an N-channel MOSFET housed in a compact SOT-23 package, offering a power dissipation of 0.36W. It is a type of metal oxide semiconductor field effect transistor designed for applications where efficient current control is crucial, utilising a unipolar principle via a gate to manipulate flow between the drain and source terminals. This MOSFET operates effectively in both depletion and saturation modes, making it suitable for a variety of electronic applications, including switching and amplification tasks in consumer electronics, industrial equipment, and automotive systems. The BSS139's architecture optimises performance for low-voltage, high-speed switching, contributing to its versatility as a reliable component in numerous circuit designs.

Type	BSS139
Channels	1
Content	1
Enclosure	SOT 23
I(d)	0.10A
Mounting Type	Surface-mount
Power (max) P(TOT)	0.36W
Product Type	MOSFET
R(DS)(on)	30Ω