Infineon BSP89H6327XTSA1 BSP89 N-channel MOSFET 1.8W SOT-223

Infineon Technologies BSP89H6327XTSA1 is an N-channel MOSFET designed for efficient power management applications. This unipolar transistor, enclosed in a compact SOT-223 package, features a maximum power dissipation of 1.8W, making it suitable for consumer electronics and industrial applications where space is a constraint. The device's metal oxide semiconductor structure allows for rapid switching performance with low on-state resistance, ensuring minimal power loss. Typical uses for the BSP89 include voltage regulation and signal amplification in circuit designs that require precise control of electrical current. The integration of field effect and metal oxide control technologies emphasizes its role in high-frequency and high-speed switching environments.

Type	BSP89
Channels	1
Content	1
Enclosure	SOT 223
I(d)	0.35A
Mounting Type	Surface-mount
Power (max) P(TOT)	1.8W
Product Type	MOSFET
R(DS)(on)	7.5Ω