Fairchild Semiconductor BS170 N Channel MOSFET

Enhancement mode field effect transistor, N-Channel type, 60V drain-source breakdown voltage, 1.2R drain-source on-resistance, 500mA drain current, 20V gate source voltage, 10ns turn-on time, 10ns turn-off time, 830mW power, TO-92 case, they can be used in most applications requiring up to 500mA dc, these products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications, these n-channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology, these products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance, high density cell design for extremely low rds(on), voltage controlled small signal switch, rugged and reliable, high saturation current capability, supplied in bulk pack.