Diotec MMBT4401 Transistor BJT Discrete SOT 23 NPN

Diotec MMBT4401 is a silicon-based bipolar junction transistor (BJT) available in a compact SOT-23 package, designed for NPN configuration. This discrete semiconductor device is engineered to provide effective current amplification in various electronic circuits. With its low saturation voltage and high current gain, it is commonly used in applications such as signal amplification, switching, and in driving components that require precise control of electric currents. The MMBT4401 can be found in consumer electronics, automotive systems, and industrial equipment where reliable performance and space efficiency are critical. Its robust construction ensures consistent operation in conditions demanding a dependable NPN transistor function.

Type	Transistor (BJT) - Discrete
Collector Current	600mA
Collector emitter Voltage U(CEO)	40V
Collector-emitter saturation Voltage (max.)	750mV
Content	1
DC Current Gain (hfe)	300
Enclosure	SOT 23
Mounting Type	Surface-mount
Operating temperature (max.)	150°C
Power (max) P(TOT)	0.25W
Product Type	Transistor (BJT) - Discrete
Transit frequency f(T)	100MHz