Diotec MMBT2222A Transistor BJT Discrete SOT 23 NPN Transistor Device

Diotec MMBT2222A is a discrete silicon NPN bipolar junction transistor housed in a compact SOT-23 package. This component is designed for general-purpose amplification and switching applications, making it suitable for use in various electronic circuits. With an ability to handle collector currents up to 600 mA and offer a collector-emitter voltage of 40 V, the MMBT2222A provides reliable performance in digital and analogue circuits alike. Its small package size allows it to be integrated into space-constrained designs, commonly found in signal processing, low-power amplification, and driver applications. This makes the Diotec MMBT2222A a versatile choice for engineers dealing with compact electronic devices requiring efficient transistor performance.

Type	Transistor (BJT) - Discrete
Collector Current	600mA
Collector emitter Voltage U(CEO)	40V
Collector-emitter saturation Voltage (max.)	1000mV
Content	1
DC Current Gain (hfe)	375
Enclosure	SOT 23
Mounting Type	Surface-mount
Operating temperature (max.)	150°C
Power (max) P(TOT)	0.25W
Product Type	Transistor (BJT) - Discrete
Transit frequency f(T)	100MHz