Diotec BC846BW Transistor BJT NPN Discrete SOT 323

Diotec BC846BW is a bipolar junction NPN transistor that comes in a compact SOT-323 package. Designed for its utility in various low power amplification and switching applications, this silicon-based transistor offers reliable performance with a maximum collector current of 100 mA and a collector-emitter voltage rating of 65 V. Its discreet design and efficient thermal characteristics make it ideal for usage in densely packed electronic circuits such as mobile devices and other consumer electronics. The BC846BW excels in low-noise amplification tasks, providing engineers with flexibility and stability in circuit designs where precision and space constraints are critical.

Type	Transistor (BJT) - Discrete
Collector Current	100mA
Collector emitter Voltage U(CEO)	65V
Collector-emitter saturation Voltage (max.)	600mV
Content	1
DC Current Gain (hfe)	290
Enclosure	SOT 323
Mounting Type	Surface-mount
Operating temperature (max.)	150°C
Power (max) P(TOT)	0.2W
Product Type	Transistor (BJT) - Discrete
Transit frequency f(T)	100MHz