A complementary Darlington power transistor with an silicon epitaxial-base, monolithic configuration and integrated anti-parallel collector-emitter diode. Typical applications includes linear and switching industrial equipment.
NPN Polarity
100V Collector-Emitter voltage
100V Collector-Base voltage
5V Emitter-Base voltage
12A Collector current
80W Power
20000 DC Current gain
100uA Collector cut-off current
3V Collector-Emitter saturation voltage
TO-220 Case
Type
NPN
Package/Case
TO-220
Collector-Base Voltage (Vcb)
100V
Emitter-Base Voltage (Veb)
5V
Collector Current (Ic)
12A
Power Dissipation (Pd)
80W
DC Current Gain (hfe)
20000
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