Infineon Technologies IRFL4105PBF-GURT MOSFET N-channel 2.1 W SOT 223

Infineon Technologies IRFL4105PBF-GURT MOSFET is an N-channel metal-oxide-semiconductor field-effect transistor (MOSFET) designed to offer efficient power management solutions in various electronic applications. Encased in a SOT-223 package, it boasts a power dissipation capability of 2.1 watts, which makes it suitable for surface-mount applications requiring compact and reliable components. This unipolar transistor facilitates effective switching and amplification processes due to its structure that includes a gate, drain, and source configuration, providing high-speed performance, making it ideal for use in power conversion, load switch, and signal amplification. Additionally, its integration into systems that process analogue or digital signals enhances the overall functionality in consumer electronics, automotive, and industrial automation domains.

Type	IRFL4105PBF-GURT
Channels	1
Content	1
Enclosure	SOT 223
I(d)	5.2A
Mounting Type	Surface-mount
Power (max) P(TOT)	2.1W
Product Type	MOSFET
R(DS)(on)	0.045Ω