Infineon Technologies IRF7855TRPBF MOSFET 1 N-channel 2.5 W SO 8 type

Infineon Technologies offers the IRF7855TRPBF MOSFET, a versatile N-channel unipolar transistor designed for efficient power management applications. This MOSFET, characterised by its metal oxide semiconductor structure, operates with a maximum power dissipation of 2.5 W within a compact SO-8 type package, ensuring reliability and thermal efficiency in constrained spaces. The device showcases a robust gate to drain voltage tolerance, making it suitable for high-speed switching applications, such as in voltage regulation, power conversion, and motor drive circuits. Engineers utilise this field effect transistor in designs that require precise control characteristics, benefiting from its low on-state resistance and rapid transition capabilities. The IRF7855TRPBF is part of Infineon's extensive portfolio, serving as a critical component in reducing overall system size without compromising performance.

Type	IRF7855PBF-GURT
Channels	1
Content	1
Enclosure	SO 8
I(d)	12A
Mounting Type	Surface-mount
Power (max) P(TOT)	2.5W
Product Type	MOSFET
R(DS)(on)	0.0094Ω