Infineon Technologies IRF7306TRPBF IRF7306PBF-GURT MOSFET 2 P-channel 2.0 W SO

Infineon Technologies IRF7306TRPBF is a dual P-channel MOSFET that utilises a metal-oxide-semiconductor structure, enabling efficient electrical control within circuits. This unipolar transistor, with its distinct gate and drain configurations, operates with a power dissipation of up to 2.0 watts, making it a robust option for circuits that require reliable switching and amplification characteristics. Typically housed in a small-outline integrated circuit package, the IRF7306PBF-GURT variant offers enhanced thermal performance thanks to its surface-mount technology compatibilities. Engineers often use the IRF7306TRPBF in applications such as power management, load switching, and amplification circuits, where its depletion type channel permits operation in both linear and saturation modes, meeting demands for compact and efficient electronic designs.

Type	IRF7306PBF-GURT
Channels	2
Content	1
Enclosure	SO 8
Mounting Type	Surface-mount
Power (max) P(TOT)	2.0W
Product Type	MOSFET
R(DS)(on)	0.16Ω