Infineon Technologies IRF5210STRLPBF MOSFET 1 P-channel 170 W D2PAK

Infineon Technologies' IRF5210STRLPBF is a P-channel MOSFET designed for high performance in various engineering applications. Featuring a maximum power dissipation of 170 watts, this device is housed in a robust D2PAK package, offering excellent thermal performance and reliability. The MOSFET operates efficiently as a metal-oxide-semiconductor field-effect transistor, leveraging its unipolar transistor characteristics to manage high power levels with low gate drive requirements. Commonly utilised in power management, switching applications, and voltage regulation, the IRF5210STRLPBF is ideal for use in environments demanding precise and efficient control of electrical power. Its design makes it particularly suited for tasks requiring rapid and efficient switching with minimal power loss, thereby supporting enhanced operational efficiency in various electronic systems.

Type	IRF5210SPBF-GURT
Channels	1
Content	1
Enclosure	D2PAK
I(d)	-38A
Mounting Type	Surface-mount
Power (max) P(TOT)	170W
Product Type	MOSFET
R(DS)(on)	0.06Ω