Infineon Technologies IKW25N120T2FKSA1 IGBT 1200V TO-247 Tube

Infineon Technologies' IKW25N120T2FKSA1 is a high-performance insulated gate bipolar transistor (IGBT) that features a voltage rating of 1200V and is encapsulated in a TO-247 package. This semiconductor device combines the attributes of high efficiency and fast switching, making it suitable for demanding applications requiring high voltage and moderate current capabilities. The IGBT's design primarily serves the purpose of enhancing the efficiency and reliability of power electronics, especially in industrial motor drives, uninterruptible power supplies (UPS), and renewable energy systems such as solar inverters. Its robust construction allows it to operate effectively in harsh electrical environments, contributing to systems that prioritise energy efficiency and performance. With a silicon-based internal structure, this component offers engineers a reliable solution for integrating high-voltage operation in compact designs.

Type	IKW25N120T2FKSA1
Continuous Collector Current	50A
Collector Emitter Voltage	1200V
Power Dissipation	349W
Package Type	TO 247
Mounting Type	Through-hole
Off delay t(d)(off)(2)	265ns
On delay (t(d)(on)	27ns
Product Type	IGBT