Infineon Technologies BSP295H6327XTSA1 MOSFET N-channel 1.8W SOT 223

Infineon Technologies BSP295H6327XTSA1 is an N-channel MOSFET designed for efficient power switching applications. This metal-oxide-semiconductor field-effect transistor is housed in a compact SOT-223 package and features a power dissipation of 1.8 watts, making it suitable for space-constrained environments. The device operates as a unipolar transistor with a gate, source, and drain configuration, employing an insulated-gate field-effect transistor (IGFET) design that enhances its switching efficiency. Typical applications include use in power supply regulation, motor control circuits, and audio amplification systems, where the high efficiency and reliability of MOS transistors are advantageous. This component's ability to function in both depletion and saturation modes provides engineers with the flexibility needed for diverse electronic circuit designs.

Type	BSP295
Channels	1
Content	1
Enclosure	SOT 223
I(d)	1.80A
Mounting Type	Surface-mount
Power (max) P(TOT)	1.8W
Product Type	MOSFET
R(DS)(on)	0.3O