Infineon IRLL024NPBF-GURT N-channel MOSFET 2.1 W SOT 223 single package

Infineon Technologies, with the part number IRLL024NPBF-GURT, offers an N-channel MOSFET designed for efficiency and reliability in various electronic applications. This device operates as a metal-oxide-semiconductor field-effect transistor (MOSFET), featuring a unipolar design that allows for high-speed switching and efficiency. It is housed in a compact SOT-223 package, ensuring a power dissipation capability of up to 2.1 watts. The IRLL024NPBF-GURT is ideally suited for applications in power management and conversion, such as DC-DC converters, as well as in switching regulators, where precise control of gate and drain voltages is required for optimal performance. Its robust construction, coupled with the ability to handle significant current loads, makes it a reliable choice for engineers focusing on enhancing electronic circuit efficiency.

Type	IRLL024NPBF-GURT
Channels	1
Content	1
Enclosure	SOT 223
I(d)	3.1A
Mounting Type	Surface-mount
Power (max) P(TOT)	2.1W
Product Type	MOSFET
R(DS)(on)	0.1Ω