Infineon IRFR1018ETRPBF IRFR1018EPBF-GURT N-channel MOSFET 110W TO-252AA

Infineon Technologies presents the IRFR1018ETRPBF and IRFR1018EPBF-GURT, which are N-channel MOSFETs designed to deliver efficient performance in a variety of electronic circuits. This field-effect transistor, classified under the metal-oxide-semiconductor category, operates with a power dissipation capacity of up to 110 watts and features a TO-252AA package, ensuring reliable thermal management and compact integration in circuit designs. Key electrical functions include the unipolar transistor configurations involving the gate, drain, and source terminals that support swift switching actions and efficient conductivity modulation. Engineers often utilise these MOSFETs in applications such as power management systems, motor control circuits, and switching power supplies, where they benefit from their high efficiency and fast switching capabilities. These devices underline the robust nature of Infineon's semiconductor solutions, catering to both industrial and consumer electronics applications.

Type	IRFR1018EPBF-GURT
Channels	1
Content	1
Enclosure	TO 252AA
I(d)	56A
Mounting Type	Through-hole
Power (max) P(TOT)	110W
Product Type	MOSFET
R(DS)(on)	0.0084Ω