Infineon IRFL4310TRPBF MOSFET 1 N-channel 2.1 W SOT 223

Infineon Technologies offers the IRFL4310TRPBF, a high-performance N-channel MOSFET designed for efficient power management applications. With a maximum power dissipation of 2.1 watts and housed in a SOT-223 package, this metal oxide semiconductor field effect transistor provides reliable switching performance with minimal thermal resistance. It features a unipolar structure, where the conduction is controlled via an insulated gate, offering high-speed switching capabilities with low on-resistance. The IRFL4310TRPBF is typically utilised in applications such as DC-DC converters, load switch circuits, and other digital switching environments that demand robust and efficient power handling. Its compact size and effective thermal management make it well-suited for space-constrained designs.

Type	IRFL4310PBF-GURT
Channels	1
Content	1
Enclosure	SOT 223
I(d)	2.20A
Mounting Type	Surface-mount
Power (max) P(TOT)	2.1W
Product Type	MOSFET
R(DS)(on)	0.2Ω