Infineon IRF9Z34NSTRLPBF IRF9Z34NSPBF-GURT MOSFET 1 P-channel 68W D2PAK

Infineon Technologies' IRF9Z34NSTRLPBF is a metal-oxide-semiconductor field-effect transistor (MOSFET) designed for efficient switching applications. This P-channel MOSFET features a robust maximum power dissipation of 68 watts and is encapsulated in a D2PAK package, offering excellent heat dissipation characteristics. With its unipolar transistor design, it efficiently controls current flow using a gate and drain structure, making it suitable for a wide range of applications such as power management, load switches, and motor control in both commercial and industrial environments. Utilising a depletion mode operation, this device offers high-speed switching capabilities and reliable performance in complex circuits. The IRF9Z34NSTRLPBF is highly suitable for environments requiring efficient power conversion and regulation, ensuring optimal performance in electronic systems.

Type	IRF9Z34NSPBF-GURT
Channels	1
Content	1
Enclosure	D2PAK
I(d)	-19A
Mounting Type	Surface-mount
Power (max) P(TOT)	68W
Product Type	MOSFET
R(DS)(on)	0.1Ω