Infineon IRF7380TRPBF IRF7380PBF-GURT MOSFET N-channel 2.0W SO 8 MOSFETs

Infineon Technologies presents the IRF7380TRPBF IRF7380PBF-GURT, a robust N-channel MOSFET designed to offer superior efficiency in circuit applications. This field-effect transistor operates with a metal-oxide-semiconductor structure that provides high-speed switching and low on-state resistance, making it ideal for power management applications. Engineered for low power loss, the IRF7380TRPBF is housed in a compact SO-8 package, offering a thermal resistance of 2.0W, which is beneficial in compact circuit designs. Typical applications include switching regulators, motor drives, and DC-DC converters, where the capabilities of this MOSFET can be fully exploited. Its performance attributes make it a reliable choice for use in high-frequency designs requiring fast, efficient operation.

Type	IRF7380PBF-GURT
Channels	2
Content	1
Enclosure	SO 8
Mounting Type	Surface-mount
Power (max) P(TOT)	2.0W
Product Type	MOSFET
R(DS)(on)	0.073Ω