Infineon IRF7205TRPBF P-channel MOSFET 2.5 W SO-8

Infineon Technologies' IRF7205TRPBF is a P-channel MOSFET housed in a compact SO-8 package, capable of dissipating up to 2.5 watts of power. This metal oxide semiconductor field effect transistor is designed for efficiency and reliability, featuring a voltage rating that allows it to operate effectively as a switch in various electrical circuits. Its unipolar nature, with well-defined gate, drain, and source terminals, makes it suitable for applications requiring precise control and rapid switching, such as power management in portable devices and automotive systems. As a depletion-type MOSFET, it offers advantages in high-speed operation, making it an ideal choice for engineers developing systems that require low power consumption yet high performance. Typical applications include use in DC-DC converters and low-side switching operations where efficiency is a critical parameter.

Type	IRF7205PBF-GURT
Channels	1
Content	1
Enclosure	SO 8
I(d)	-4.6A
Mounting Type	Surface-mount
Power (max) P(TOT)	2.5W
Product Type	MOSFET
R(DS)(on)	0.07Ω