Infineon IRF5305SPBF-GURT MOSFET 110W P-channel D2PAK MOSFETs

Infineon Technologies' IRF5305SPBF-GURT is a P-channel MOSFET that delivers a power handling capacity of up to 110 watts, housed in a robust D2PAK package. As a metal-oxide-semiconductor field-effect transistor, it provides effective switching and amplification in electronic circuits, utilising its gate terminal to control the flow of current between the source and drain terminals. The IRF5305SPBF-GURT is advantageous in circuits requiring efficient high-speed switching and is commonly employed in applications such as power management systems, motor drives, and inverter circuits. Its unipolar nature, relying on majority carriers, makes it a preferable choice for designs requiring low power consumption and minimal conduction loss. Infineon's design ensures high reliability and performance in demanding environments.

Type	IRF5305SPBF-GURT
Channels	1
Content	1
Enclosure	D2PAK
I(d)	-31A
Mounting Type	Surface-mount
Power (max) P(TOT)	110W
Product Type	MOSFET
R(DS)(on)	0.06Ω