Infineon IKW20N60TFKSA1 IGBT TO-247 600V Tube High Power Transistor

Infineon Technologies' IKW20N60TFKSA1 is a high-power transistor featuring an insulated gate bipolar transistor (IGBT) design, housed in a robust TO-247 package. This specific IGBT is rated for a maximum collector-emitter voltage of 600 volts, making it suitable for demanding applications such as inverters, motor drives, and power supplies where efficiency and high power handling are critical. Engineered by Infineon, this device integrates the switching speed of a metal-oxide-semiconductor field-effect transistor and the high-current and low-saturation voltage characteristics of a bipolar transistor, providing a reliable solution in power electronics. Its design ensures efficient thermal management and lower conduction losses, rendering it an optimal choice for applications requiring robust performance under strenuous conditions. The IKW20N60TFKSA1 exemplifies the advanced semiconductor technology tailored for modern power conversion systems.

Type	IKW20N60TFKSA1
Collector Current	41A
Collector emitter reverse Voltage U(CES)	600V
Enclosure	TO 247
Mounting Type	Through-hole
Off delay t(d)(off)(2)	223ns
On delay (t(d)(on)	18ns
Power (max) P(TOT)	166W
Product Type	IGBT